Circuit simulation model for ultimately-scaled ballistic nanowire MOSFETs
نویسندگان
چکیده
منابع مشابه
A Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport
In this paper, we propose a quasi-analytical device model of nanowire FET (NWFET) for both ballistic and drift-diffusion current transport, which can be used in any conventional circuit simulator like SPICE. The closed form expressions for I-V and C-V characteristics are obtained by analytically solving device equations with appropriate approximations. The developed model was further verified w...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2013
ISSN: 1349-2543
DOI: 10.1587/elex.10.20120906